Pagina 1592 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.592/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SE70PBHM3/86A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad2.512
100V
2.9A (DC)
1.05V @ 7A
Standard Recovery >500ns, > 200mA (Io)
2.6µs
20µA @ 100V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
GP10T-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1300V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad3.408
1300V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1300V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
US1BHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad7.616
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
D371S45T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER FAST 4600V 800A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad2.304
-
-
-
-
-
-
-
-
-
-
-
VS-1N3208R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 15A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-203AB, DO-5, Stud
Voorraad2.224
50V
15A
1.5V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 175°C
VS-60EPU06HN3
Vishay Semiconductor Diodes Division

DIODE INPUT 60A 600V TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 81ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-247-2
Voorraad5.120
600V
60A
1.68V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
81ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 175°C
HSM835J/TR13
Microsemi Corporation

DIODE SCHOTTKY 35V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AB, SMC
Voorraad5.664
35V
8A
620mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 35V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
BYV30JT-600PQ
WeEn Semiconductors

BYV30JT-600PQ TO3PF STANDARD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad7.872
-
-
-
-
-
-
-
-
-
-
-
SR1203 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
package: DO-201AD, Axial
Voorraad5.472
30V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
RU 2AMV
Sanken

DIODE GEN PURP 600V 1.1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad6.336
600V
1.1A
1.2V @ 1.1A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
SRT14HA1G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 125°C
package: T-18, Axial
Voorraad5.664
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
GS2J-LTP
Micro Commercial Co

DIODE GEN PURP 600V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad2.112
600V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BAS21GWJ
Nexperia USA Inc.

BAS16GW/SOD123/SOD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -
package: SOD-123
Voorraad101.400
200V
-
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
-
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-
1N5627-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
package: SOD-64, Axial
Voorraad104.988
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 200V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
RK 46
Sanken

DIODE SCHOTTKY 60V 3.5A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 3.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad29.754
60V
3.5A
620mV @ 3.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 60V
-
Through Hole
Axial
-
-40°C ~ 150°C
hot ES2D-13-F
Diodes Incorporated

DIODE GEN PURP 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad1.449.084
200V
2A
920mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
HER3L03G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 200 V
  • Capacitance @ Vr, F: 54pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
3 µA @ 200 V
54pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
DSEP15-06AS-TUB
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
600 V
15A
2.04 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
NTE5869
NTE Electronics, Inc

DIODE GEN PURP 1KV 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12 mA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
1000 V
6A
1.1 V @ 19 A
Standard Recovery >500ns, > 200mA (Io)
-
12 mA @ 1000 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 175°C
SK85
Diotec Semiconductor

DIODE SCHOTTKY 50V 8A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
50 V
8A
700 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 50 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
CDS6858-1-TR
Microchip Technology

SMALL-SIGNAL SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SB560-A
Diodes Incorporated

DIODE SCHOTTKY 60V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Voorraad3
60 V
5A
670 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
RBR1L40ADDTE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
package: -
Voorraad3.099
40 V
1A
520 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
B320A-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
JAN1N4500
Microchip Technology

DIODE GEN PURP DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
-
-
1.1 V @ 300 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
100 nA @ 80 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
SK510A
SMC Diode Solutions

DIODE SCHOTTKY 100V SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad411.048
100 V
-
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
PMEG2010EA-QX
Nexperia USA Inc.

PMEG2010EA-Q/SOD323/SOD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 15 V
  • Capacitance @ Vr, F: 19pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C
package: -
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20 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 15 V
19pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C
MMBD717W_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 10 V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
20 V
200mA
370 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 10 V
2.5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C