Pagina 158 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 887
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  158/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SBLF1030HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
package: TO-220-3 Full Pack, Isolated Tab
Voorraad7.520
30V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 125°C
GPP15J-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AC, DO-15, Axial
Voorraad6.560
600V
1.5A
-
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
8pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
GP02-30HE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 3KV 250MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 3000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad6.816
3000V
250mA
3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 3000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
1N4596
Powerex Inc.

DIODE GEN PURP 1.4KV 150A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
package: DO-205AA, DO-8, Stud
Voorraad7.488
1400V
150A
-
Standard Recovery >500ns, > 200mA (Io)
-
3.5mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
JANTXV1N6629US
Microsemi Corporation

DIODE GEN PURP 800V 1.4A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 2µA @ 800V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C
package: SQ-MELF, E
Voorraad3.696
800V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
2µA @ 800V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
DNA30EM2200PC
IXYS

DIODE GEN PURP 2.2KV 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 2200V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.664
2200V
30A
1.26V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 2200V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 175°C
CMR3U-02 BK
Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AB, SMC
Voorraad5.744
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
EU01V
Sanken

DIODE GEN PURP 400V 250MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad3.600
400V
250mA
2.5V @ 250mA
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
BY520-14E-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 500MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad2.416
1400V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
DB2U31600L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SOD923

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 800ps
  • Current - Reverse Leakage @ Vr: 15µA @ 30V
  • Capacitance @ Vr, F: 2pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
  • Operating Temperature - Junction: 125°C (Max)
package: SOD-923
Voorraad5.872
30V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
800ps
15µA @ 30V
2pF @ 10V, 1MHz
Surface Mount
SOD-923
SOD-923
125°C (Max)
S1ML RUG
TSC America Inc.

DIODE, 1A, 1000V, SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-219AB
Voorraad3.536
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 1000V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
VS-E4PU6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 74ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-247-2
Voorraad2.736
600V
60A
1.7V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
74ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
GP2D010A060A
Global Power Technologies Group

SCHOTTKY DIODE 600V 10A TO-220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 40µA @ 600V
  • Capacitance @ Vr, F: 527pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -50°C ~ 175°C
package: TO-220-2
Voorraad6.216
600V
30A (DC)
1.65V @ 10A
No Recovery Time > 500mA (Io)
0ns
40µA @ 600V
527pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-50°C ~ 175°C
FES10D
Fairchild/ON Semiconductor

10A 200V ULTRA FAST RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -
package: TO-277, 3-PowerDFN
Voorraad3.488
-
-
-
-
-
-
-
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-
PCFFS40120AF
onsemi

DIODE SIL CARBIDE 1.2KV 61A DIE

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 61A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
1200 V
61A
1.75 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
2250pf @ 1V, 100kHz
Surface Mount
Die
Die
-55°C ~ 175°C
1N6620-TR
Microchip Technology

DIODE GEN PURP 220V 1.2A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 220 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
220 V
1.2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
500 nA @ 220 V
10pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 150°C
DSEP90-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 90A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
  • Capacitance @ Vr, F: 48pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad90
1200 V
90A
2.69 V @ 90 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
1 mA @ 1200 V
48pF @ 600V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-55°C ~ 175°C
PU2BLS
Taiwan Semiconductor Corporation

25NS, 2A, 200V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 31pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad60.000
100 V
2A
930 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 100 V
31pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 175°C
ER3D-TP-HF
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 175°C
package: -
Request a Quote
200 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 175°C
FR103T-R
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
200 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
U1B-M3-5AT
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 6.8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
100 V
1A
920 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
15 ns
5 µA @ 100 V
6.8pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
V3F6HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 3A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 60 V
  • Capacitance @ Vr, F: 310pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
Request a Quote
60 V
3A
620 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 µA @ 60 V
310pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 150°C
BAS16J-QF
Nexperia USA Inc.

BAS16J-Q/SOD323F/SOD323F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: 150°C
package: -
Request a Quote
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
150°C
ST3545AX-D
SMC Diode Solutions

TRENCH SCHOTTKY DIODE 45V 35A R-

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-7, Axial
  • Supplier Device Package: R-7
  • Operating Temperature - Junction: -
package: -
Voorraad4.800
-
-
-
-
-
-
-
Through Hole
R-7, Axial
R-7
-
TUAU4DH
Taiwan Semiconductor Corporation

50NS, 4A, 200V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 62pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad18.000
200 V
4A
900 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
62pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
SMPC4.6U
-55°C ~ 175°C
CGRB307-HF
Comchip Technology

DIODE GEN PURP 1KV 3A DO214AA SM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
1000 V
3A
1.15 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
SK82C-V6G
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
20 V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
DSP45-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 45A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 18pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
1200 V
45A
1.26 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
18pF @ 400V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-40°C ~ 175°C