Pagina 1168 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.168/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
LL101A-13
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 30MA SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80 MiniMELF
  • Operating Temperature - Junction: 125°C (Max)
package: DO-213AC, MINI-MELF, SOD-80
Voorraad3.904
60V
30mA (DC)
410mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
hot SSB44HE3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 4A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AA, SMB
Voorraad38.400
40V
4A
490mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
PRLL5818,115
NXP

DIODE SCHOTTKY 30V 1A MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: 125°C (Max)
package: SOD-87
Voorraad2.928
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
50pF @ 4V, 1MHz
Surface Mount
SOD-87
MELF
125°C (Max)
MUR1100ERL
ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad6.000
1000V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot STTA106U
STMicroelectronics

DIODE GEN PURP 600V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: 125°C (Max)
package: DO-214AA, SMB
Voorraad636.000
600V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
125°C (Max)
IDP23011XUMA1
Infineon Technologies

AC/DC DIGITAL PLATFORM

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad6.544
-
-
-
-
-
-
-
-
-
-
-
RS2BHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad3.248
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SE10FJHM3/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-219AB
Voorraad6.064
600V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 600V
7.5pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
SS23LHMQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad5.152
30V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAS16D-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 250MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
package: SOD-123
Voorraad4.224
75V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
VS-50WQ04FN-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 405pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.088
40V
5.5A
510mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
405pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
1N5408G A0G
TSC America Inc.

DIODE, 3A, 1000V, DO-201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.168
1000V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
CSFMT106-HF
Comchip Technology

DIODE GEN PURP 400V 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
package: SOD-123H
Voorraad3.360
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
PDS3200Q-13
Diodes Incorporated

DIODE SCHOTTKY 200V 3A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 150°C
package: PowerDI? 5
Voorraad6.544
200V
3A
880mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 150°C
hot STTH802G-TR
STMicroelectronics

DIODE GEN PURP 200V 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 6µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad156.264
200V
8A
1.05V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
6µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
SBRT3U45SAF-13
Diodes Incorporated

DIODE SBR 45V 3A SMAF

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-221AC, SMA Flat Leads
Voorraad74.994
45V
3A
480mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat
-55°C ~ 150°C
hot MBRS140
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-214AA, SMB
Voorraad437.940
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 125°C
1N2443
Solid State Inc.

DIODE GEN PURP 400V 150A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
400 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
US1DHM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 200 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
JAN1N6304R
Microchip Technology

DIODE GEN PURP 50V 70A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
50 V
70A
1.18 V @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
25 µA @ 50 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 175°C
SS1H4LWH
Taiwan Semiconductor Corporation

1A, 40V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
40 V
1A
650 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 nA @ 40 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 175°C
1N1201BR
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
150 V
12A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 150 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
RURDG1580
Harris Corporation

ULTRAFAST DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
V10PM153-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 3.6A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: 650pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Voorraad13.500
150 V
3.6A
840 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
650pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
CMR3U-10-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 1KV 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Voorraad4.500
1000 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
5 µA @ 1000 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
1N6627US-TR
Microchip Technology

DIODE GEN PURP 440V 1.75A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 440 V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 440 V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
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440 V
1.75A
1.35 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
2 µA @ 440 V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
RL252GP-AP
Micro Commercial Co

DIODE GEN PURP 100V 2.5A R-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-3, Axial
  • Supplier Device Package: R-3
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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100 V
2.5A
1.1 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 100 V
40pF @ 4V, 1MHz
Through Hole
R-3, Axial
R-3
-55°C ~ 150°C
SRAF5150
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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150 V
5A
950 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 150 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C