Pagina 1160 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.160/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
B340A-13-G-72
Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad3.536
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
CR3F-060GPP BK
Central Semiconductor Corp

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-201AD, Axial
Voorraad4.144
600V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
40pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
JANTXV1N3595UR-1
Microsemi Corporation

DIODE GP 125V 150MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 2nA @ 125V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AA
Voorraad4.800
125V
150mA
920mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
2nA @ 125V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
MUR7060
GeneSiC Semiconductor

DIODE GEN PURP 600V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-203AB, DO-5, Stud
Voorraad5.120
600V
70A
1.7V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-55°C ~ 150°C
HERAF1002G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 10A, 100V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2 Full Pack
Voorraad3.632
100V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
hot V15P45-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15A 45V TO-277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 4.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-277, 3-PowerDFN
Voorraad469.332
45V
4.8A (DC)
580mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
SR515 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.392
150V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RGP10JE-E3/53
Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad3.664
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot S5D-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad147.864
200V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
B340LB-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AA, SMB
Voorraad2.880
40V
3A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
GP10D-4003HE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
package: DO-204AL, DO-41, Axial
Voorraad4.224
200V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
HS1FL R3G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad7.232
300V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS15LHMTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad7.424
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1GBTR
SMC Diode Solutions

DIODE GEN PURP 400V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AA, SMB
Voorraad4.048
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 175°C
S12MC R7G
TSC America Inc.

DIODE, 12A, 1000V, DO-214AB (SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad7.328
1000V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 1000V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
CDSF4448-HF
Comchip Technology

DIODE SW 125MA 100V 1005

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 125mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9ns
  • Current - Reverse Leakage @ Vr: 100nA @ 80V
  • Capacitance @ Vr, F: 9pF @ 500mV, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: -40°C ~ 125°C
package: 1005 (2512 Metric)
Voorraad2.224
80V
125mA
1V @ 100mA
Standard Recovery >500ns, > 200mA (Io)
9ns
100nA @ 80V
9pF @ 500mV, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
-40°C ~ 125°C
hot S3M
S3M
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad1.304.472
1000V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
20FR120
Solid State Inc.

DIODE GEN PURP REV 1.2KV 20A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
1200 V
20A
1.2 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
BAS116Q-7-F
Diodes Incorporated

DIODE GEN PURP 85V 215MA SOT23-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 85 V
  • Current - Average Rectified (Io): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 5 nA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Voorraad8.640
85 V
215mA
1.25 V @ 150 mA
Standard Recovery >500ns, > 200mA (Io)
3 µs
5 nA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-65°C ~ 150°C
CD214B-B220R
Bourns Inc.

DIODE SCHOTTKY 20V 2A 2SMD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: 115pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
20 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
115pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2-SMD
-55°C ~ 125°C
JANS1N5554-TR
Microchip Technology

DIODE GEN PURP 5A B AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
-
5A
1.3 V @ 9 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
1 µA @ 1000 V
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
FR1AAFC_R1_00001
Panjit International Inc.

DIODE GEN PURP 50V 1A SMAF-C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
50 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 50 V
15pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C
EM518-AP
Micro Commercial Co

DIODE GEN PURP 2KV 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
2000 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 2000 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
1N3973R
Solid State Inc.

DIODE GEN PURP REV 400V 100A DO8

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
400 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
S1GLS-RVG
Taiwan Semiconductor Corporation

DIODE GP 400V 1.2A SOD123HE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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400 V
1.2A
1.3 V @ 1.2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 175°C
JANTX1N6912UTK2AS
Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
  • Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
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45 V
25A
640 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 45 V
1000pF @ 5V, 1MHz
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
WNSC051200Q
WeEn Semiconductors

DIODE SIL CARB 1.2KV 5A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
package: -
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1200 V
5A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
250pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
SF2JDF-13
Diodes Incorporated

DIODE GEN PURP 600V 2A DFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: D-Flat
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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600 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
50pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
D-Flat
-55°C ~ 150°C