Pagina 1148 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.148/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRF10H35-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY ITO-220AC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad6.880
-
-
-
-
-
-
-
-
-
-
-
hot 5817SMG/TR13
Microsemi Corporation

DIODE SCHOTTKY 20V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-215AA, SMB Gull Wing
Voorraad87.720
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
GF1A/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214BA
Voorraad5.360
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 50V
-
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
R6020622PSYA
Powerex Inc.

DIODE GEN PURP 600V 220A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 220A
  • Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 50mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -45°C ~ 150°C
package: DO-205AB, DO-9, Stud
Voorraad6.832
600V
220A
2.75V @ 800A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
50mA @ 600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-45°C ~ 150°C
1N3294A
GeneSiC Semiconductor

DIODE GEN PURP 800V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 13mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
package: DO-205AA, DO-8, Stud
Voorraad5.168
800V
100A
1.5V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
13mA @ 800V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
1N3087R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A DO205AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 17mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AC, DO-30, Stud
  • Supplier Device Package: DO-205AC (DO-30)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: DO-205AC, DO-30, Stud
Voorraad7.232
300V
150A
1.2V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
17mA @ 300V
-
Chassis, Stud Mount
DO-205AC, DO-30, Stud
DO-205AC (DO-30)
-65°C ~ 200°C
VS-8ETH06FP-N3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A 600V TO-220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220 Full Pack
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-220-2 Full Pack
Voorraad6.880
600V
8A
2.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220 Full Pack
-65°C ~ 175°C
SRAF520 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
package: TO-220-2 Full Pack
Voorraad2.560
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 125°C
GPA807HC0G
TSC America Inc.

DIODE, 8A, 1000V, AEC-Q101, TO-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2
Voorraad2.224
-
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VS-6EWH06FNTRLHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.792
600V
6A
2.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
SS22L R3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad6.864
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RGP10A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad4.112
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
PR1002G-T
Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad5.728
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
SR006HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad7.680
60V
500mA
700mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
80pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S3G R7G
TSC America Inc.

DIODE, 3A, 400V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad5.744
400V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
JAN1N5619
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
package: A, Axial
Voorraad7.776
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
RB520S-40-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 200MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 125°C (Max)
package: SC-79, SOD-523
Voorraad3.312
40V
200mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 40V
-
Surface Mount
SC-79, SOD-523
SOD-523
125°C (Max)
UF4005-G
Comchip Technology

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad6.784
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
SD091SB150A-T2
SMC Diode Solutions

DIODE SCHOTTKY 150V 7.5A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 7.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 250pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
150 V
7.5A
890 mV @ 7.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
250pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
40HFR50
Solid State Inc.

DIODE GEN PURP 500V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -
package: -
Request a Quote
500 V
40A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-
CBS05F30-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 118pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2B
  • Operating Temperature - Junction: 125°C (Max)
package: -
Voorraad29.943
30 V
500mA
-
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
118pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2B
125°C (Max)
B140BE-13
Diodes Incorporated

DIODE SCHOTTKY 40V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
40 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
S5DC-K
Taiwan Semiconductor Corporation

5A, 200V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad9.000
200 V
5A
1.15 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
JANTXV1N6625U-TR
Microchip Technology

DIODE GP 1.1KV 1A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
1100 V
1A
1.75 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
1 µA @ 1100 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 150°C
V12P15HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
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150 V
12A
1.08 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
APT60D100SG-TR
Microchip Technology

DIODE GEN PURP 1KV 60A D3PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 280 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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1000 V
60A
2.5 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
280 ns
250 µA @ 1000 V
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
-55°C ~ 175°C
V20K170HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.2A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170 V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 170 V
  • Capacitance @ Vr, F: 800pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 165°C
package: -
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170 V
3.2A
1.02 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 170 V
800pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 165°C
MB36-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: 125pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad2.256
60 V
3A
740 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
125pF @ 0V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C