Pagina 1045 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.045/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot 1N4448-T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AH, DO-35, Axial
Voorraad108.000
75V
500mA
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
JAN1N6761UR-1
Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-213AB, MELF (Glass)
Voorraad4.896
100V
1A
380mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
-
-65°C ~ 150°C
RGP10B-M3/54
Vishay Semiconductor Diodes Division

DIODE SW 1A 100V 150NS DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad5.760
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SS3P3HE3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-220AA
Voorraad4.224
30V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
DGS15-018CS
IXYS

DIODE SCHOTTKY 180V 24A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io): 24A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 250µA @ 180V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.096
180V
24A
1.5V @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
23ns
250µA @ 180V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
ISOPAC0119
Semtech Corporation

DIODE GEN PURP 1KV 10A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad3.216
1000V
10A
2.2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 1000V
-
-
-
-
-55°C ~ 175°C
R7010805XXUA
Powerex Inc.

DIODE GEN PURP 800V 550A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15µs
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-200AA, A-PUK
Voorraad5.552
800V
550A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
15µs
50mA @ 800V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 150°C
A187RPE
Powerex Inc.

DIODE GEN PURP REV 1.5KV DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.3µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
package: DO-205AA, DO-8, Stud
Voorraad2.432
1500V
150A
-
Standard Recovery >500ns, > 200mA (Io)
2.3µs
-
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 125°C
JANTXV1N5802URS
Microsemi Corporation

DIODE GEN PURP 50V 1A APKG

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
package: SQ-MELF, A
Voorraad3.344
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 175°C
JANTX1N5551US
Microsemi Corporation

DIODE GEN PURP 400V 5A B-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
package: SQ-MELF, B
Voorraad6.336
400V
5A
1.2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
2µs
1µA @ 400V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
VS-85HFLR40S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 85A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
package: DO-203AB, DO-5, Stud
Voorraad3.760
400V
85A
1.75V @ 266.9A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
100µA @ 400V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
LSM1100G/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 100V SMBG

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad5.744
-
-
-
-
-
-
-
-
-
-
-
VS-20L15TS-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 20A TO263

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 15V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.488
15V
20A
410mV @ 19A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 15V
2000pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 125°C
SB120-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-204AL, DO-41, Axial
Voorraad3.152
20V
1A
480mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 125°C
1N5819 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-204AL, DO-41, Axial
Voorraad2.912
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
hot BAV16W-7-F
Diodes Incorporated

DIODE GEN PURP 100V 150MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
package: SOD-123
Voorraad456.000
100V
150mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
VS-8EWF12S-M3
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 270ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad23.556
1200V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
100µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-40°C ~ 150°C
VS-60EPU06L-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 81 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad624
600 V
60A
1.68 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
81 ns
50 µA @ 600 V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
HS15JLWH
Taiwan Semiconductor Corporation

75NS, 1.5A, 600V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad60.000
600 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 600 V
9pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
CDBJFSC8650-G
Comchip Technology

DIODE SIL CARBIDE 650V 8A TO220F

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 560pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad1.437
650 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
560pF @ 0V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220F
-55°C ~ 175°C
PX3746HDNSM1401XTMA1
Infineon Technologies

LED PX3746HDNSM1401XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
ER3A-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 175°C
package: -
Request a Quote
50 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 175°C
S3280
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TSP15U120S
Taiwan Semiconductor Corporation

15A, 120V, TRENCH SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
120 V
15A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 120 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
MSASC75W45FV-TR
Microchip Technology

DIODE SCHOTTKY 45V 75A THINKEY4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 750 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™4
  • Supplier Device Package: ThinKey™4
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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45 V
75A
760 mV @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
-
750 µA @ 45 V
-
Surface Mount
ThinKey™4
ThinKey™4
-55°C ~ 175°C
1N3618R
Solid State Inc.

DIODE GEN PURP 200V 16A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
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200 V
16A
1.2 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
MSASC25H45KV-TR
Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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45 V
25A
610 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 45 V
-
Surface Mount
ThinKey™2
ThinKey™2
-55°C ~ 150°C
FRS400EA200
SanRex Corporation

DIODE GEN PURP 2KV 400A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 400 A
  • Speed: Standard Recovery > 500ns, > 2A (Io)
  • Reverse Recovery Time (trr): 700 ns
  • Current - Reverse Leakage @ Vr: 100 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
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2000 V
400A
2.2 V @ 400 A
Standard Recovery > 500ns, > 2A (Io)
700 ns
100 mA @ 2000 V
-
Chassis Mount
Module
-
-40°C ~ 150°C