Diodes Incorporated Producten

FD0670003

Diodes Incorporated

OSCILLATOR XO 6.7584MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 6.7584MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

package: 4-SMD, No Lead

FK1200010

Diodes Incorporated

OSCILLATOR XO 12.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 12MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 10mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

package: 4-SMD, No Lead

FD2500054

Diodes Incorporated

OSCILLATOR XO 25.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

package: 4-SMD, No Lead

ZXMN6A09KTC

Diodes Incorporated

MOSFET N-CH 60V 11.2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.15W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 7.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

DMN3200U-7

Diodes Incorporated

MOSFET N-CH 30V 2.2A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 650mW (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

ZTX1053ASTOA

Diodes Incorporated

TRANS NPN 75V 3A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 75V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3, Formed Leads

ZTX325STOA

Diodes Incorporated

TRANSISTOR RF NPN E-LINE

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.3GHz
• Noise Figure (dB Typ @ f): 5dB @ 500MHz
• Gain: 53dB
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3, Formed Leads

1N4747A-T

Diodes Incorporated

DIODE ZENER 20V 1W DO41

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

package: DO-204AL, DO-41, Axial

DDZ9683Q-7

Diodes Incorporated

DIODE ZENER SOD123

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 800nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZX84B33-7-F

Diodes Incorporated

DIODE ZENER 33V 300MW SOT23

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23.1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

ES1C-13

Diodes Incorporated

DIODE GEN PURP 150V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-214AC, SMA

S3BB-13-F

Diodes Incorporated

DIODE GEN PURP 100V 3A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-214AA, SMB

ES2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-214AA, SMB

MB156-F

Diodes Incorporated

RECTIFIER BRIDGE 15A 600V MB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, MB
• Supplier Device Package: MB

package: 4-Square, MB

GBJ2501

Diodes Incorporated

RECT BRIDGE GPP 100V 25A GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

package: 4-SIP, GBJ

AS431IBNTR-G1

Diodes Incorporated

IC VREF SHUNT ADJ SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 36V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

PT8A3512WEX

Diodes Incorporated

IRON CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

AP9101CAK6-BTTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

PI3B3257WE

Diodes Incorporated

IC QUAD 2:1 MUX/DEMUX 3ST 16SOIC

• Type: Multiplexer/Demultiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

package: 16-SOIC (0.154", 3.90mm Width)

74AUP1G86FS3-7

Diodes Incorporated

IC GATE XOR 1CH 2-INP 4-X2DFN

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.7 V ~ 0.9 V
• Logic Level - High: 1.6 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-X2DFN (0.80x0.80)
• Package / Case: 4-XFDFN Exposed Pad

package: 4-XFDFN Exposed Pad

PI3PCIE3242ZLEX

Diodes Incorporated

IC MUX/DEMUX 2:2 30TQFN

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:2
• Switch Circuit: DPDT
• Number of Channels: 4
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 3 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 6.5GHz
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 30-WFQFN Exposed Pad
• Supplier Device Package: 30-TQFN (2.5x4.5)

package: 30-WFQFN Exposed Pad

PI3USB102GZLEX

Diodes Incorporated

IC USB 2.0 SWITCH 2:1 10TQFN

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 5 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 1GHz
• Features: Bi-Directional, USB 2.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-WFQFN
• Supplier Device Package: 10-TQFN (1.3x1.6)

package: 10-WFQFN

SMCJ7.0CA-13-F

Diodes Incorporated

TVS DIODE 7VWM 12VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 125A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

package: DO-214AB, SMC

BAS70W-06Q-7-F

Diodes Incorporated

DIODE ARR SCHOTT 70V 70MA SOT323

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io) (per Diode): 70mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: -

Request a Quote

DMC2057UVT-13

Diodes Incorporated

MOSFET N/P-CH 20V 4A/3.3A TSOT26

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
• Power - Max: 700mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

package: -

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BCP5616QTC

Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2 W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3

package: -

DMP4016SSS-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W
• Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: -

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KBJ2008G-TU

Diodes Incorporated

Medium/High Power Bridge KBJ TUB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 20 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBJ
• Supplier Device Package: KBJ

package: -

Request a Quote