Diodes Incorporated Producten

ZXM61N03FTC

Diodes Incorporated

MOSFET N-CH 30V 1.4A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 910mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

DMP2200UDW-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.9A SOT363

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 900mA
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
• Power - Max: 450mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

package: 6-TSSOP, SC-88, SOT-363

2DD2150R-13

Diodes Incorporated

TRANS NPN 20V 3A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
• Power - Max: 1W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

package: TO-243AA

FZT851TC

Diodes Incorporated

TRANS NPN 60V 6A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 3W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

ZTX749

Diodes Incorporated

TRANS PNP 25V 2A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3

DDZ28-7

Diodes Incorporated

DIODE ZENER 28V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

PR2003G-T

Diodes Incorporated

DIODE GEN PURP 200V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 35pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-204AC, DO-15, Axial

RS1J-13

Diodes Incorporated

DIODE GEN PURP 600V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-214AC, SMA

SBR12U120P5-13

Diodes Incorporated

DIODE SBR 120V 12A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 120V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 150°C

package: PowerDI? 5

AP7341D-11FS4-7

Diodes Incorporated

IC REG LINEAR 1.1V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 1.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.62V @ 150mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

package: 4-XDFN Exposed Pad

ZRC400A02STZ

Diodes Incorporated

IC VREF SHUNT 4.096V TO92-3

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 4.096V
• Voltage - Output (Max): -
• Current - Output: 5mA
• Tolerance: ±2%
• Temperature Coefficient: 90ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: 90µVrms
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 23µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

APX810S05-26SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 20 ms Minimum
• Voltage - Threshold: 2.63V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PT8A3246WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PI5PD2051BTAEX

Diodes Incorporated

IC POWER DIST USB 1.5A 5SOT23

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 500mA
• Rds On (Typ): 70 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SOT-23-5

package: SC-74, SOT-457

DML1008LDS-7

Diodes Incorporated

IC LOAD SWITCH V-DFN3030-8

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 3.2 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 6A
• Rds On (Typ): 8 mOhm (Max)
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: V-DFN3030-8

package: 8-VDFN Exposed Pad

PAM2842RGR

Diodes Incorporated

IC LED DRIVER RGLTR DIM 20TSSOP

• Type: DC DC Regulator
• Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 5.5V
• Voltage - Supply (Max): 40V
• Voltage - Output: -
• Current - Output / Channel: 3.5A (Switch)
• Frequency: -
• Dimming: Analog, PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 20-TSSOP-EP

package: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad

PI3B3253LE-2017

Diodes Incorporated

BUS SWITCH 3V TSSOP-16

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PI3V713-AZLE

Diodes Incorporated

IC MUX/DEMUX 7CH 32TQFN

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 7
• On-State Resistance (Max): 5.6 Ohm
• Voltage - Supply, Single (V+): 3.3V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 1.7GHz
• Features: RGB
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN-EP (3x6)

package: 32-WFQFN Exposed Pad

PI3PCIE3442ZHE

Diodes Incorporated

IC PCI EXCHANGE SW 3.0 42-TQFN

• Applications: PCIe
• Multiplexer/Demultiplexer Circuit: 1:1
• Switch Circuit: -
• Number of Channels: 8
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 3 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 6.5GHz
• Features: Bi-Directional
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

package: 42-VFQFN Exposed Pad

PT7M8218B10CE

Diodes Incorporated

IC REG LINEAR 1V 300MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.18V @ 150mA (Typ)
• Current - Output: 300mA
• Current - Quiescent (Iq): 50µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

package: 5-TSSOP, SC-70-5, SOT-353

DMTH4001STLWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V PowerDI101

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 13185 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 0.85mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI1012-8
• Package / Case: 8-PowerSFN

package: -

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DMTH4011SPDWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
• Power - Max: 2.6W (Ta), 37.5W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (SWP)

package: -

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PI3SSD1914NKE-DX

Diodes Incorporated

DDR SWITCH TFBGA-115

• Applications: -
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: -
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote

ZXT13P40DE6QTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT26 T&R

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1 W
• Frequency - Transition: 115MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

package: -

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STPR1040CTW

Diodes Incorporated

DIODE ARRAY GP 400V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: -

ZTX690BQ

Diodes Incorporated

PWR LOW SAT TRANSISTOR EP3 AMMO

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
• Power - Max: 1 W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

package: -

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DMN62D2UT-7

Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

package: -

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FCX491AQTA

Diodes Incorporated

PWR MID PERF TRANSISTOR SOT89 T&

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 1 W
• Frequency - Transition: 150MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

package: -