Diodes Incorporated Producten

FK0500002

Diodes Incorporated

OSCILLATOR XO 5.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 5MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 10mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

package: 4-SMD, No Lead

DMPH4015SPS-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.6W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

DMC6070LND-13

Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerDI3333-8

package: 8-PowerVDFN

BCX5310TA

Diodes Incorporated

TRANS PNP 80V 1A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

package: TO-243AA

DDTA124EE-7-F

Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

package: SOT-523

DDTD143TU-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

DDTB122TU-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 220
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

MMSZ5231BS-7-F

Diodes Incorporated

DIODE ZENER 5.1V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

package: SC-76, SOD-323

ES3AB-13

Diodes Incorporated

DIODE GEN PURP 50V 3A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-214AA, SMB

SBR3U60P1Q-7

Diodes Incorporated

DIODE SBR 60V 3A PDI123

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -65°C ~ 150°C

package: POWERDI?123

SBL1630CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

BAT54ATA

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 4µA @ 25V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

AP2121N-3.2TRE1

Diodes Incorporated

IC REG LINEAR 3.2V 200MA SOT23-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA
• PSRR: 70dB (1kHz)
• Control Features: -
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

AZ34063UP-E1

Diodes Incorporated

IC REG BCK BST INV ADJ 1.5A 8DIP

• Function: Step-Up, Step-Down
• Output Configuration: Positive or Negative
• Topology: Buck, Boost
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 36V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 36V
• Current - Output: 1.5A (Switch)
• Frequency - Switching: Up to 180kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

package: 8-DIP (0.300", 7.62mm)

APX810-31SAG-7

Diodes Incorporated

IC MPU RESET CIRC 3.08V SOT23-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 3.08V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

AUR9807VSGD

Diodes Incorporated

IC BATT CHRGR LI-ION SGL 20QFN

• Battery Chemistry: Lithium-Ion
• Number of Cells: 1
• Current - Charging: Constant - Programmable
• Programmable Features: Timer
• Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
• Charge Current - Max: 1.5A
• Battery Pack Voltage: 4.2V
• Voltage - Supply (Max): 6.3V
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 20-WFQFN Exposed Pad
• Supplier Device Package: 20-QFN (4.5x3.5)

package: 20-WFQFN Exposed Pad

PI7C9X112SLFDEX

Diodes Incorporated

IC PCIE-PCIX BRIDGE 128LQFP

• Applications: PCI-to-PCI Bridge
• Interface: PCI Express
• Voltage - Supply: 3.3V
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

package: -

PI3EQX6801ZDEX

Diodes Incorporated

IC REDRIVER SAS/SATA 20TQFN

• Type: Buffer, ReDriver
• Applications: SAS, SATA
• Input: CML
• Output: CML
• Data Rate (Max): 6.5Gbps
• Number of Channels: 2
• Delay Time: -
• Signal Conditioning: Input Equalization, Output Pre-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 1.5V, 3.3V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PI3DBS12412AZHEX

Diodes Incorporated

IC MUX/DEMUX 2:4 40TQFN

• Applications: Thunderbolt
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 3.3V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 11.3GHz
• Features: Bi-Directional
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 40-WFQFN Exposed Pad
• Supplier Device Package: 40-TQFN (3x6)

package: 40-WFQFN Exposed Pad

1.5KE47CA-T

Diodes Incorporated

TVS DIODE 40.2VWM 64.8VC DO201A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

package: DO-201AA, DO-27, Axial

PI7C9X1172CZHE

Diodes Incorporated

SPI BRIDGE W-QFN5050-32 TRAY 490

• Protocol: I²C
• Function: Bridge, I²C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.62 V ~ 3.63 V
• Current - Supply: 6mA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

package: 32-WFQFN Exposed Pad

AP2331TDSA-7

Diodes Incorporated

USB POWER SWITCH,SOT23,T&R,3K

• Function: Current Switch
• Sensing Method: High-Side
• Accuracy: -
• Voltage - Input: 2.7 V ~ 5.2 V
• Current - Output: 200mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

AP2401B31KTR-G1

Diodes Incorporated

IC CURRENT LIMIT SWITCH

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

BAV99-7-G

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io) (per Diode): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: -

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1N4148WTQ-7

Diodes Incorporated

DIODE GEN PURP 80V 125MA SOD523

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 125mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -65°C ~ 150°C

package: -

B250BE-13

Diodes Incorporated

DIODE SCHOTTKY 50V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 50 V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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DL4002-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1A MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: MELF
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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DMTH15H053SPSW-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

package: -

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