Diodes Incorporated Producten

FK7770001

Diodes Incorporated

OSCILLATOR XO 77.76MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 77.76MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 18mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

package: 4-SMD, No Lead

LMN200B02-7

Diodes Incorporated

MCU LOAD SWITCH 200MA SOT-363

• Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
• Applications: Load Switch
• Voltage - Rated: 50V PNP, 60V N-Channel
• Current Rating: 200mA PNP, 115mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

package: 6-TSSOP, SC-88, SOT-363

ZVP2106ASTOA

Diodes Incorporated

MOSFET P-CH 60V 0.28A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

package: E-Line-3

DMNH6042SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
• Power - Max: 2.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

ZTX712STOA

Diodes Incorporated

TRANS PNP DARL 60V 0.8A E-LINE

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3, Formed Leads

ZUMT2369ATA

Diodes Incorporated

TRANSISTOR NPN 15V 200MA SC70-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

DSS60600MZ4-13

Diodes Incorporated

TRANS PNP 60V 6A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
• Power - Max: 1.2W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

DDTA115GKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

package: TO-236-3, SC-59, SOT-23-3

DDTC123TUA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

MMSZ5236BS-7

Diodes Incorporated

DIODE ZENER 7.5V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

package: SC-76, SOD-323

DDZ9709-7

Diodes Incorporated

DIODE ZENER 24V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

AZ23C47-7

Diodes Incorporated

DIODE ZENER ARRAY 47V SOT23-3

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

LLSD101C-13

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA MINIMELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 15mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -55°C ~ 125°C

package: DO-213AA

SBRT20U60SP5-7D

Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 180µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -55°C ~ 150°C

package: PowerDI? 5

DFLS2100Q-7

Diodes Incorporated

DIODE SCHOTTKY 100V POWERDI123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 36pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -55°C ~ 175°C

package: POWERDI?123

SBRT40V100CTE

Diodes Incorporated

DIODE SBR TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 100V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Full Pack, I2Pak
• Supplier Device Package: TO-262

package: TO-262-3 Full Pack, I2Pak

AP7335-SNG-7

Diodes Incorporated

IC REG LIN POS ADJ 300MA 6DFN

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5V
• Voltage Dropout (Max): 0.2V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: 6-DFN2020 (2x2)

package: 6-UDFN Exposed Pad

AP431QG-7

Diodes Incorporated

IC VREF SHUNT ADJ SOT25

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.495V
• Voltage - Output (Max): 36V
• Current - Output: 200mA
• Tolerance: ±1%
• Temperature Coefficient: 30ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 500µA
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

package: SC-74A, SOT-753

AP9214LA-AK-HSB-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage, Short Circuit
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2535-6

package: 6-UDFN Exposed Pad

PI74FCT162245CTAE

Diodes Incorporated

IC TRANSCVR DUAL N-INV 48TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

package: 48-TFSOP (0.240", 6.10mm Width)

PI4ULS5V106ZHDEX

Diodes Incorporated

INTERFACE ULS U-QFN3030-16

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 6
• Voltage - VCCA: 0.95V ~ 3.3V
• Voltage - VCCB: 1.8V ~ 5V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: 100MHz
• Operating Temperature: -40°C ~ 85°C
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 16-UFQFN Exposed Pad
• Supplier Device Package: 16-UQFN (3x3)

package: 16-UFQFN Exposed Pad

74AHC1G126QSE-7

Diodes Incorporated

IC BUFFER NON-INVERT 5.5V SOT353

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SOT-353

package: -

AP7361E-28FGE-7

Diodes Incorporated

LDO CMOS HICURR U-DFN3030-8 T&R

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): 91 µA
• Current - Supply (Max): -
• PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
• Control Features: Enable, Power Good
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: U-DFN3030-8 (Type E)

package: -

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DMN21D1UDA-7B

Diodes Incorporated

MOSFET 2N-CH 20V 0.455A 6DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
• Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
• Power - Max: 310mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: X2-DFN0806-6

package: -

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DMT15H053SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta), 90W (Tc)
• Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

package: -

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DMN3060LW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

package: -

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DMC2991UDA-7B

Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
• Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
• Power - Max: 350mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: X2-DFN0806-6

package: -

DMT12H065LFDF-13

Diodes Incorporated

MOSFET N-CH 115V 4.3A 6UDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 115 V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

package: -

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