Pagina 22 - Diodes Incorporated Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Diodes Incorporated Producten - Transistors - FET's, MOSFET's - Single

Archief 2.523
Pagina  22/91
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN33D8LTQ-13
Diodes Incorporated

MOSFET N-CH 30V 115MA SOT523

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 240mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
package: -
Voorraad30.000
MOSFET (Metal Oxide)
30 V
115mA (Ta)
2.5V, 4V
1.5V @ 100µA
0.55 nC @ 10 V
48 pF @ 5 V
±20V
-
240mW (Ta)
5Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMT10H052LFDF-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V U-DFN2020

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
package: -
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MOSFET (Metal Oxide)
100 V
5A (Ta)
4.5V, 10V
3V @ 250µA
5.4 nC @ 10 V
258 pF @ 50 V
±20V
-
800mW (Ta)
52mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMTH8008LFGQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad26.634
MOSFET (Metal Oxide)
80 V
17A (Ta), 70A (Tc)
4.5V, 10V
2.5V @ 1mA
37.7 nC @ 10 V
2254 pF @ 40 V
±20V
-
1.2W (Ta), 50W (Tc)
6.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH43M8LFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
package: -
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MOSFET (Metal Oxide)
40 V
23A (Ta), 96A (Tc)
4.5V, 10V
2.5V @ 250µA
36.9 nC @ 10 V
2737 pF @ 20 V
±20V
-
3.6W (Ta), 65W (Tc)
4.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH43M8LFG-7
Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad11.850
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
40.1 nC @ 10 V
2798 pF @ 20 V
±20V
-
2.62W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH10H015SPSQ-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
100 V
8.4A (Ta), 50.5A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
1.5W (Ta), 55W (Tc)
14.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
ZXM62N03E6TA
Diodes Incorporated

MOSFET N-CH 30V 3.2A SOT-23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
package: -
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MOSFET (Metal Oxide)
30 V
3.2A (Ta)
-
1V @ 250µA
9.6 nC @ 10 V
380 pF @ 25 V
-
-
-
110mOhm @ 2.2A, 10V
-
Surface Mount
SOT-23-6
SOT-23-6
DMT32M4LFG-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
30A (Ta), 100A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
4366 pF @ 15 V
±20V
-
1.1W
1.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN3009LFVW-7
Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
package: -
Voorraad26.295
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN2991UT-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
package: -
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MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.35 nC @ 4.5 V
21.5 pF @ 15 V
±10V
-
280mW (Ta)
3Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMP2109UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: -
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MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
1V @ 250µA
6 nC @ 4.5 V
443 pF @ 10 V
±10V
-
1.2W (Ta)
80mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMT10H009SSS-13
Diodes Incorporated

MOSFET BVDSS: 61V-100V SO-8 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
12A (Ta), 42A (Tc)
10V
4V @ 250µA
29.8 nC @ 10 V
2085 pF @ 50 V
±20V
-
1.4W (Ta)
9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
-
-
-
DMTH10H009SPSQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14A (Ta), 86A (Tc)
10V
4V @ 250µA
30 nC @ 10 V
2085 pF @ 50 V
±20V
-
1.6W (Ta), 100W (Tc)
8.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMTH6016LFDFW-13
Diodes Incorporated

MOSFET N-CH 60V 9.4A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.06W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
  • Package / Case: 6-UDFN Exposed Pad
package: -
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MOSFET (Metal Oxide)
60 V
9.4A (Ta)
4.5V, 10V
3V @ 250µA
15.3 nC @ 10 V
925 pF @ 30 V
±20V
-
1.06W (Ta)
18mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
U-DFN2020-6 (SWP) (Type F)
6-UDFN Exposed Pad
DMTH6005LFG-13
Diodes Incorporated

MOSFET N-CH 60V 19.7A/100A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
19.7A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 250µA
48.7 nC @ 10 V
3150 pF @ 30 V
±20V
-
2.38W (Ta), 75W (Tc)
4.1mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN4030LK3Q-13
Diodes Incorporated

MOSFET N-CH 40V 9.4A TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
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MOSFET (Metal Oxide)
40 V
9.4A (Ta)
4.5V, 10V
3V @ 250µA
12.9 nC @ 10 V
604 pF @ 20 V
±20V
-
2.14W (Ta)
30mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN601TKQ-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
343mA (Ta)
5V, 10V
2.5V @ 1mA
1.04 nC @ 10 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMPH6250SQ-13
Diodes Incorporated

MOSFET P-CH 60V 2.4A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad21.417
MOSFET (Metal Oxide)
60 V
2.4A (Ta)
4.5V, 10V
3V @ 250µA
8.3 nC @ 10 V
512 pF @ 30 V
±20V
-
920mW
155mOhm @ 2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
ZXMN10A08E6QTA
Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
package: -
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MOSFET (Metal Oxide)
100 V
1.5A (Ta)
6V, 10V
4V @ 250µA
7.7 nC @ 10 V
405 pF @ 50 V
±20V
-
1.1W (Ta)
250mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
DMT67M8LPSW-13
Diodes Incorporated

MOSFET N-CH 60V 17.3A/82A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
package: -
Voorraad14.835
MOSFET (Metal Oxide)
60 V
17.3A (Ta), 82A (Tc)
4.5V, 10V
2.5V @ 250µA
37.5 nC @ 10 V
2130 pF @ 30 V
±20V
-
2.8W (Ta), 62.5W (Tc)
6.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMTH12H007SK3-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
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MOSFET (Metal Oxide)
120 V
86A (Tc)
10V
4V @ 250µA
44 nC @ 10 V
3142 pF @ 60 V
±20V
-
2W (Ta)
8.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH47M2SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
40 V
73A (Tc)
10V
4V @ 250µA
12.1 nC @ 10 V
897 pF @ 20 V
±20V
-
3.3W (Ta), 68W (Tc)
7.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
ZXMN3B01FTC
Diodes Incorporated

MOSFET N-CH 30V 1.7A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
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MOSFET (Metal Oxide)
30 V
1.7A (Ta)
2.5V, 4.5V
700mV @ 250µA (Min)
2.93 nC @ 4.5 V
258 pF @ 15 V
±12V
-
625mW (Ta)
150mOhm @ 1.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH10H010SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
100 V
15A (Ta), 100A (Tc)
6V, 10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
3W (Ta), 166W (Tc)
8.8mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH4008LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
40 V
14.4A (Ta), 64.8A (Tc)
5V, 10V
3V @ 250µA
15.3 nC @ 10 V
1088 pF @ 20 V
±20V
-
2.99W (Ta), 55.5W (Tc)
8.8mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH6005LFGQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
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MOSFET (Metal Oxide)
60 V
17A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
47.5 nC @ 10 V
3223 pF @ 30 V
±20V
-
2.38W (Ta), 75W (Tc)
4.1mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN3061LCA3-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V X4-DSN1006

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.12W
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X4-DSN1006-3 (Type C)
  • Package / Case: 3-XFDFN
package: -
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MOSFET (Metal Oxide)
30 V
4.6A (Ta)
1.8V, 8V
1.1V @ 250µA
1.4 nC @ 4.5 V
126 pF @ 15 V
12V
-
1.12W
58mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
X4-DSN1006-3 (Type C)
3-XFDFN
DMN3009LFVW-13
Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
package: -
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MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN