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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 8.2A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad7.808 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 8DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-VDFN Exposed Pad
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package: 8-VDFN Exposed Pad |
Voorraad7.792 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V TO-252
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad7.616 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH W/DIODE DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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package: 6-WDFN Exposed Pad |
Voorraad3.776 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 734pF @ 12.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad2.016 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 15A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad221.268 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad1.727.148 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 18.5A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7765pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.608 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 12A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad5.072 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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package: TO-251-3 Stub Leads, IPak |
Voorraad2.752 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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package: TO-220-3 Full Pack |
Voorraad60.252 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 40V 6A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad39.960 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 2A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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package: TO-251-3 Stub Leads, IPak |
Voorraad6.048 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 15A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad119.531.928 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 14.5A 8DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4195pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
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package: 8-PowerSMD, Flat Leads |
Voorraad1.070.424 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 20V 3A DFN2X2-6L
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x2)
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package: 6-WDFN Exposed Pad |
Voorraad3.120 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 3.4A 6-TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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package: SC-74, SOT-457 |
Voorraad6.400 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad375.024 |
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Alpha & Omega Semiconductor Inc. |
IC REGULATOR BUCK SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 15.3V
- Current - Output: 5A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad3.216 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 3A SYNC 8SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 3A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad426.384 |
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Alpha & Omega Semiconductor Inc. |
IC LOAD SW HI-SIDE CC 10DFN
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): -
- Rds On (Typ): 22 mOhm
- Input Type: Non-Inverting
- Features: Slew Rate Controlled
- Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-DFN (4x4)
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package: 10-WDFN Exposed Pad |
Voorraad6.096 |
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Alpha & Omega Semiconductor Inc. |
IC USB 2.0 SWITCH 10QFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 600mOhm
- Channel-to-Channel Matching (ΔRon): 40mOhm
- Voltage - Supply, Single (V+): 1.65V ~ 3.6V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 50ns, 25ns
- -3db Bandwidth: 45MHz
- Charge Injection: 9pC
- Channel Capacitance (CS(off), CD(off)): 22pF
- Current - Leakage (IS(off)) (Max): 50nA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-QFN (1.6x2.1)
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package: 10-UFQFN |
Voorraad5.760 |
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Alpha & Omega Semiconductor Inc. |
POWER IC EZBUCK
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 14V
- Voltage - Input (Max): 28V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 23.8V
- Current - Output: 4A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-PowerWFQFN
- Supplier Device Package: 18-QFN (3x3)
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package: 18-PowerWFQFN |
Voorraad51.930 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 70A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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package: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
750V SILICON CARBIDE MOSFET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
- Vgs (Max): +15V, -5V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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package: - |
Request a Quote |
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|
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Alpha & Omega Semiconductor Inc. |
28V/25A VID BUCK REGULATOR
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Programmable
- Number of Outputs: 1
- Voltage - Input (Min): 5V
- Voltage - Input (Max): 28V
- Voltage - Output (Min/Fixed): 0V
- Voltage - Output (Max): 1.8V
- Current - Output: 25A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-PowerTFQFN
- Supplier Device Package: 36-QFN (5x5)
|
package: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 22.5/41A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 27.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 3A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
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