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GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

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Onderdeelnummer GT10G131(TE12L,Q)
Fabrikant Toshiba Semiconductor and Storage
Omschrijving IGBT 400V 1W 8-SOIC
Gegevensblad

GT10G131(TE12L,Q) Gegevensblad

package 8-SOIC (0.173", 4.40mm Width)
ECAD
In voorraad 2.432 piece(s)
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GT10G131(TE12L,Q)-specificaties

FabrikantToshiba Semiconductor and Storage
CategorieDiscrete halfgeleiderproducten - Transistors - IGBT's - Single
package8-SOIC (0.173", 4.40mm Width)
ECAD
Serie-
IGBT-type-
Voltage - Collector Emitter Breakdown (Max)400V
Stroom - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200A
Vce (aan) (Max) @ Vge, Ic2.3V @ 4V, 200A
Vermogen - Max1W
Energie overschakelen-
Input TypeStandard
Gate Charge-
Td (aan / uit) @ 25 ° C3.1µs/2µs
Test conditie-
Reverse Recovery Time (trr)-
Bedrijfstemperatuur150°C (TJ)
Montage typeSurface Mount
Pakket / koffer8-SOIC (0.173", 4.40mm Width)
Apparaatpakket leverancier8-SOP (5.5x6.0)

GT10G131(TE12L,Q) datasheet

GT10G131(TE12L,Q) Packaging

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Onderdeelnummer Fabrikant Omschrijving Voorraad

GT10G131(TE12L,Q)

D# GT10G131(TE12L,Q)-ND

Toshiba America Electronic Components

IGBT 400V 1W 8-SOIC

0

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  • GT10G131(TE12L,Q) PDF
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  • GT10G131(TE12L,Q) specificatie
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  • Toshiba Semiconductor and Storage GT10G131(TE12L,Q)
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